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Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Miao M.S. | - |
dc.date.accessioned | 2008-08-27T06:30:49Z | - |
dc.date.available | 2008-08-27T06:30:49Z | - |
dc.date.issued | 2001 | - |
dc.identifier.citation | Applied Physics Letters 79(26) p:4360-4362 | en |
dc.identifier.uri | http://sutir.sut.ac.th:8080/jspui/handle/123456789/2125 | - |
dc.format.extent | 42554 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | en | en |
dc.publisher | School of Physics, Institute of Science, Suranaree University of Technology | en |
dc.subject | electronic devices | en |
dc.subject | Stacking fault band structure | en |
dc.subject | 4H–SiC | en |
dc.subject | its impact | en |
dc.title | Stacking fault band structure in 4H–SiC and its impact on electronic devices | en |
dc.type | Article | en |
Appears in Collections: | บทความ (Articles) |
Files in This Item:
File | Description | Size | Format | |
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bib1445_f.pdf | Fulltext | 41.56 kB | Adobe PDF | View/Open |
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