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dc.contributor.authorMiao M.S.-
dc.date.accessioned2008-08-27T06:30:49Z-
dc.date.available2008-08-27T06:30:49Z-
dc.date.issued2001-
dc.identifier.citationApplied Physics Letters 79(26) p:4360-4362en
dc.identifier.urihttp://sutir.sut.ac.th:8080/jspui/handle/123456789/2125-
dc.format.extent42554 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoenen
dc.publisherSchool of Physics, Institute of Science, Suranaree University of Technologyen
dc.subjectelectronic devicesen
dc.subjectStacking fault band structureen
dc.subject4H–SiCen
dc.subjectits impacten
dc.titleStacking fault band structure in 4H–SiC and its impact on electronic devicesen
dc.typeArticleen
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